Linearization of High Power Amplifier Using A Memristor in Microwave Transmission

dc.contributor.authorMensah E.K.
dc.contributor.authorAshitei T.A.
dc.contributor.authorArthur J.K.
dc.date.accessioned2025-03-06T18:11:43Z
dc.date.accessioned2025-03-06T18:58:56Z
dc.date.issued2019
dc.description.abstractThe transmission of high-power signals via terrestrial or satellite media requires High Power Amplifiers (HPAs) to amplify these signals over a long range. High power amplifiers are used primarily to ensure effectiveness and efficiency in the transmission as well as to boost the signal to a sufficient power level for transmission to supply the receiver with a sufficiently high level of signal power. The most popular HPA's include Travelling Wave Tube amplifier (TWTA), Klystron Power Amplifiers, Solid State Power Amplifiers (SSPA), etc. Distortion is the creation of unwanted signals at frequencies the original signal does not contain. Hence, distortion is produced by a loss of linearity. The transmission of signals has been upgraded to higher levels over the years requiring the extensive use of more sophisticated modulation techniques such as Quadrature Amplitude Modulation (QAM) and other algorithms to handle the huge data demands of our modern society. In microwave satellite transmission, a High Power Amplifier (HPA) known as Travelling Wave Tube Amplifier (TWTA) is usually used to drive the carrier signal to the receiver. The problem of non-linearity arises when the HPA is operated close to its maximum power resulting in distortion of the carrier signal, thus reduction in efficiency. This paper presents the design of linearization of HPA using memory resistance predistorter to linearize the output of HPA. The output signal suffers from non-linearity distortions so memristor has been proposed a predistorter for HPA output linearization. The parameter used in modelling the input signal is 1 V, 3 GHz RF 64 QAM signal, initial memory resistance of 30 ?, Dopant drift mobility constant of 104, and the difference between boundary resistances is 7.5 ? M?. The result obtained was a linearized HPA voltage with 98% efficiency. � 2019 IEEE.
dc.identifier.doi10.1109/ICCSPN46366.2019.9150177
dc.identifier.isbn978-172810483-6
dc.identifier.urihttp://162.250.124.58:4000/handle/123456789/363
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.source2019 International Conference on Communications, Signal Processing and Networks, ICCSPN 2019
dc.subjectdistortion
dc.subjectHigh Power Amplifiers
dc.subjectlinearity
dc.subjectM-QAM
dc.subjectnonlinearity
dc.titleLinearization of High Power Amplifier Using A Memristor in Microwave Transmission
dc.typeOther
oaire.citation.conferenceDate29 May 2019 through 31 May 2019
oaire.citation.conferencePlaceAccra

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